GaN Wafers
GaN Template
PWG's GaN template refers to high-quality GaN epitaxial layers grown on sapphire, silicon, or SiC substrates. Providing a cost-effective, epi-ready platform for subsequent GaN regrowth and advanced device fabrication.
PRODUCT CENTER
Find the right wafer for your program.
Explore our standard compound semiconductor substrates and epi wafers—or collaborate with our engineers for custom specifications.
Product Search & Classification
Search by Material. Refine by Specification.
Quickly locate standard compound semiconductor wafers, or request a custom spec for your device program.
GaN Wafers
GaN LED Epitaxy
PWG's GaN LED epitaxial wafers are MOCVD-grown AlGaN/InGaN heterostructures designed for high-efficiency UV, blue, and green LEDs. Featuring precise multi-quantum well (MQW) structures, these epi wafers deliver high internal quantum efficiency (IQE), uniform emission, and superior device reliability.
Silicon Epitaxial Wafer
Silicon Epitaxial Wafer
Power Wafertech Group supplies silicon epitaxial wafers (Si epi wafers) grown by advanced CVD epitaxy. Precisely controlled silicon epitaxial layers are deposited on conductive substrates to achieve the required thickness, doping profile and resistivity for semiconductor device fabrication.
GaN Wafers
GaN HEMT Epitaxy
Precision-grown AlGaN/GaN HEMT structures for high-frequency RF and high-power switching. Featuring low-defect buffers and high-density 2DEG channels for superior device performance.
Silicon Substrate
Silicon Substrate
Power Wafertech Group supplies single-crystal silicon wafers for semiconductor device fabrication, MEMS, epitaxial growth and research applications. Both prime-grade and test-grade silicon wafers can be supplied.
Silicon Dioxide Wafer
Silicon Dioxide Wafer
Power Wafertech Group supplies silicon dioxide wafers (SiO₂ on Si) manufactured by controlled thermal oxidation of silicon substrates. Both dry thermal oxidation and wet thermal oxidation are available for different oxide thickness and process requirements. Our SiO₂ wafers feature controlled oxide thickness, good wafer-level uniformity and epi-/process-ready surfaces.
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THREE CORE MATERIAL FAMILIES
Engineered Materials for Your Device Roadmap
Browse substrates and epi wafers by material family. Standard configurations and custom specifications available for R&D and volume production.
01
ENGINEERED MATERIALS
III-V Compound Semiconductors
02
FOUNDATION MATERIALS
Wide Bandgap Semiconductor
03
PROGRAM-SPECIFIC
Silicon Materials
APPLICATIONS & INDUSTRIES
Applications & Industries
CASE 01 / HIGH-VOLTAGE SYSTEMS
Power Electronics
Wide-bandgap wafer solutions engineered for 800V+ architectures. Ensuring high-efficiency power conversion, fast switching, and reliable high-temperature operation.
APPLICATION FOCUS
EV powertrains · fast charging · industrial motor drives
RECOMMENDED PRODUCTS
4H-SiC
GaN
ENGAGEMENT PROCESS
How a custom inquiry moves forward
Submit your program-specific requirements and our engineers will take them from evaluation to a confirmed quote.
CUSTOM ENGINEERING
Parameters beyond the standard list
Custom diameter & thickness
Orientation & off-cut
Doping & resistivity
Thin films & layer stacks
Surface & edge profile
Marking & packaging
01Submit requirements
02Engineering review
03Specification alignment
04Quote & lead time
TECHNICAL INQUIRY
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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