Silicon Substrate

Silicon Substrate

Power Wafertech Group supplies single-crystal silicon wafers for semiconductor device fabrication, MEMS, epitaxial growth and research applications. Both prime-grade and test-grade silicon wafers can be supplied.

Size — 4”, 6”, 8”, 12”
Orientation — (100), (110), (111), (211), etc.
Growth method — CZ, FZ
Resistivity — 0.0005 Ω·cm to >10,000 Ω·cm
Surface finished — SSP, DSP, lapped, etched and as-cut
Packaging — Single or multi‑wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter	6” (150 mm) Silicon Wafer
Crystal Growth	CZ / FZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy, research grade
Resistivity	0.0005–10,000+ Ω·cm, depending on growth method and doping
Thickness	675 ± 25μm
TTV	≤5μm
Bow	<20μm
Warp	<20μm
Surface Finish	SSP, DSP, lapped, etched or as-cut
Edge	Notch or flat, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	8” (200 mm) Silicon Substrate
Crystal Growth	CZ / FZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy, research grade
Resistivity	0.0005–10,000+ Ω·cm, depending on growth method and doping
Thickness	725 ± 25 μm
TTV	<5 μm
Bow	<30 μm
Warp	<30 μm
Surface Finish	SSP, DSP, lapped, etched or as-cut
Edge	Notch, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	12” (300 mm) Silicon Substrate
Crystal Growth	CZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy
Resistivity	Customized according to doping requirements
Standard Thickness	775 ± 25 μm
TTV	<10 μm
Bow	<50 μm
Warp	<50 μm
Surface Finish	SSP, DSP, lapped or etched
Edge Treatment	Notch, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Silicon Wafer Type	Typical Resistivity	Key Applications
Heavily Doped Si	0.0005–0.005 Ω·cm	Power devices, MOSFETs, IGBTs, power diodes, epitaxial substrates
Low / Medium Resistivity Si	0.005–100 Ω·cm	ICs, CMOS, MEMS, sensors, semiconductor R&D
High-Resistivity Si	100–10,000 Ω·cm	RF devices, high-frequency circuits, sensors, research
Ultra-High-Resistivity Si	>10,000 Ω·cm	RF, microwave, detector and specialized research applications

Applications

Where this wafer delivers value

Heavily Doped Si

Power devices, MOSFETs, IGBTs, power diodes, epitaxial substrates | Typical Resistivity: 0.0005–0.005 Ω·cm

Low / Medium Resistivity Si

ICs, CMOS, MEMS, sensors, semiconductor R&D | Typical Resistivity: 0.005–100 Ω·cm

High-Resistivity Si

RF devices, high-frequency circuits, sensors, research | Typical Resistivity: 100–10,000 Ω·cm

Ultra-High-Resistivity Si

RF, microwave, detector and specialized research applications | Typical Resistivity: >10,000 Ω·cm

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What resistivity range is available?

Our silicon wafer portfolio covers approximately 0.0005 Ω·cm to >10,000 Ω·cm, depending on crystal growth method and doping requirements.

Do you provide prime and test-grade silicon wafers?

Yes. We supply prime, test, dummy and research-grade wafers according to the application and quality requirements.

Can silicon wafer specifications be customized?

Yes. Diameter, orientation, doping, resistivity, thickness, surface finish, TTV, bow and warp can be customized for specific device or process requirements.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.