Silicon Substrate

Silicon Substrate

Power Wafertech Group supplies single-crystal silicon wafers for semiconductor device fabrication, MEMS, epitaxial growth and research applications. Both prime-grade and test-grade silicon wafers can be supplied.

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Silicon Epitaxial Wafer

Silicon Epitaxial Wafer

Power Wafertech Group supplies silicon epitaxial wafers (Si epi wafers) grown by advanced CVD epitaxy. Precisely controlled silicon epitaxial layers are deposited on conductive substrates to achieve the required thickness, doping profile and resistivity for semiconductor device fabrication.

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Silicon Dioxide Wafer

Silicon Dioxide Wafer

Power Wafertech Group supplies silicon dioxide wafers (SiO₂ on Si) manufactured by controlled thermal oxidation of silicon substrates. Both dry thermal oxidation and wet thermal oxidation are available for different oxide thickness and process requirements. Our SiO₂ wafers feature controlled oxide thickness, good wafer-level uniformity and epi-/process-ready surfaces.

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III-V Semiconductor Epitaxial Wafers

III-V Semiconductor Epitaxial Wafer

PWG offers epitaxial solutions based on InP, GaSb and GaAs substrates, covering heterostructures for HEMTs, pHEMTs, HBTs, laser diodes, photodetectors, VCSELs, infrared detectors and other III-V devices.

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III-V Compound Wafers

InSb Wafer

With an ultra-narrow direct bandgap of approximately 0.17 eV at 300 K and exceptionally high electron mobility, InSb is particularly suited for mid-wavelength infrared (MWIR) detection in the 3–5 μm range. PWG supplies N-type and P-type Indium Antimonide (InSb) wafers for high-sensitivity infrared detection, magnetic sensing and cryogenic electronics.

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III-V Compound Wafers

InP Wafer

Indium Phosphide (InP) is a III‑V compound semiconductor with a direct bandgap (1.34eV at 300K) and higher electron mobility than GaAs. It offers superior performance in three key areas: high‑frequency RF (up to THz range), long‑wavelength optoelectronics (1.3–1.55µm), and low‑phase‑noise photonic integrated circuits.

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