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InSb substrates with EPD < 50 cm⁻² are subject to export control by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
InSb substrates with EPD < 50 cm⁻² are subject to export control by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
InSb substrates with EPD < 50 cm⁻² are subject to export control by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
With a narrow bandgap of approximately 0.17 eV at 300 K, InSb is ideal for MWIR detection in the 3–5 μm range. Typical applications include cooled infrared detectors, focal plane arrays (FPAs), thermal imaging, and gas sensing.
InSb wafer combines high electron mobility with strong magnetoresistive properties, making it suitable for sensitive magnetic sensing. Applications include Hall-effect sensors, magnetic field detectors, and position or current sensing devices.
InSb's narrow bandgap and exceptionally high electron mobility make it attractive for advanced semiconductor research. Applications include high-mobility transistors, cryogenic electronics, and low-temperature III–V device development.
Quick answers on material selection, customization, testing and ordering.
InSb is widely used for MWIR detection in the approximately 3–5 μm atmospheric window, particularly in cooled infrared detector systems.
Both N-type and P-type InSb can be used depending on the detector architecture and epitaxial or device requirements.
N-type InSb is commonly selected for Hall sensors and other high-mobility magnetic sensing devices due to its exceptional electron mobility.
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