III-V Compound Wafers

InP Wafer

Indium Phosphide (InP) is a III‑V compound semiconductor with a direct bandgap (1.34eV at 300K) and higher electron mobility than GaAs. It offers superior performance in three key areas: high‑frequency RF (up to THz range), long‑wavelength optoelectronics (1.3–1.55µm), and low‑phase‑noise photonic integrated circuits.

Size — Available in 2", 3", 4" and 6”
Orientation — (100), (111)
Conduction type — N-type (S-doped), P-type (Zn-doped)and Semi-insulating (Fe-doped)
Surface finished — SSP or DSP, epi-ready
Packaging — Single wafer cassette, vacuum sealed
Delivery — door to door, short lead time

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	2”/50.8mm InP Substrate
Conduction Type	N-Type
Dopant	S
Orientation	(100) / (111)
Conductivity	N-type
Thickness	350±25um
TTV	<10um
Bow	<10um
Warp	<10um
EPD	≤500cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	3” / 76.2mm InP Substrate
Conduction Type	N-Type
Dopant	S
Orientation	(100) / (111)
Conductivity	N-type
Thickness	600±25um
TTV	<10um
Bow	<10um
Warp	<10um
EPD	≤500cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	4” / 100mm InP Substrate
Conduction Type	N-Type
Dopant	S
Orientation	(100) / (111)
Conductivity	N-type
Thickness	600±25um
TTV	<10um
Bow	<10um
Warp	<15um
EPD	≤500cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	6” / 150mm InP Substrate
Conduction Type	N-Type
Dopant	S
Orientation	(100) / (111)
Conductivity	N-type
Thickness	675±25um
TTV	<10um
Bow	≤15um
Warp	≤15um
EPD	≤500cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Optical Communications & Photonics

InP wafers are widely used for long-wavelength optoelectronic devices operating around the 1.3 μm and 1.55 μm fiber-optic communication windows. Typical devices: DFB laser diodes EML lasers PIN photodiodes APDs Photonic integrated circuits AWG devices Recommended wafers: N-type / P-type / Semi-insulating InP, depending on device structure.

High-Speed & RF Electronics

InP offers high electron transport performance and is widely used for high-speed electronic and RF devices, including high-frequency MMICs and advanced semiconductor research. Typical devices: HBTs HEMTs High-frequency MMICs Frequency multipliers Terahertz detectors High-speed electronic devices Recommended wafers: Semi-insulating InP for RF/MMIC applications; conductive InP for selected HBT and electronic structures.

Photonic Integrated Circuits

InP is an important platform for integrated photonics because it supports both active optical devices and photonic integration. Typical applications: Optical transceivers Data-center interconnects Coherent communications Fiber-optic communications Photonic integrated circuits High-speed optical modules Recommended wafers: N-type, P-type or semi-insulating according to the epi and device architecture.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What is the difference between N-type, P-type and semi-insulating InP wafers?

N-type and P-type InP wafers are conductive substrates commonly used for optoelectronic and electronic devices. Semi-insulating InP, typically Fe-doped, is particularly suitable for RF, microwave and high-frequency applications.

Which InP wafer is suitable for optical communication devices?

The suitable conductivity type depends on the device and epitaxial structure. N-type, P-type and semi-insulating InP can all be used for different optical communication device architectures.

Which InP wafer is recommended for RF and high-frequency applications?

Semi-insulating Fe-doped InP is commonly selected for RF, microwave and high-frequency devices because of its high resistivity and electrical isolation.

Can you supply InP wafers for R&D and small-batch projects?

Yes. We support research, prototype and small-batch requirements, subject to the requested wafer specifications and quantity.

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