With an ultra-narrow direct bandgap of approximately 0.17 eV at 300 K and exceptionally high electron mobility, InSb is particularly suited for mid-wavelength infrared (MWIR) detection in the 3–5 μm range. PWG supplies N-type and P-type Indium Antimonide (InSb) wafers for high-sensitivity infrared detection, magnetic sensing and cryogenic electronics.

Indium Phosphide (InP) is a III‑V compound semiconductor with a direct bandgap (1.34eV at 300K) and higher electron mobility than GaAs. It offers superior performance in three key areas: high‑frequency RF (up to THz range), long‑wavelength optoelectronics (1.3–1.55µm), and low‑phase‑noise photonic integrated circuits.

With a narrow direct bandgap of approximately 0.354 eV at 300 K and exceptionally high electron mobility, InAs is well suited for infrared detectors, Hall sensors, high-speed transistors and other high-mobility devices.

With a lattice constant of approximately 6.096 Å, GaSb (Gallium Antimonide) provides excellent lattice compatibility with antimonide-based materials such as InAs, AlSb and InAsSb, making it an important substrate platform for Type-II superlattice (T2SL) infrared detectors, mid-IR lasers and advanced optoelectronic devices. GaSb wafers are available in multiple diameters, crystal orientations and surface finishes for epitaxial growth and device fabrication.

Gallium Arsenide (GaAs) combines a direct bandgap with high electron mobility, making it a widely used substrate material for MMICs, HEMTs, HBTs, VCSELs, laser diodes, LEDs and high-efficiency solar cells. GaAs wafers are available in multiple diameters, crystal orientations and surface finishes.