AlN Template
AlN on Silicon Template
AlN on silicon templates provide a high-quality interface and buffer platform for subsequent GaN epitaxy, supporting the development of high-performance GaN power and RF devices.
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AlN Template
AlN on Sapphire Template
Sapphire based AlN templates are available in multiple wafer sizes and customizable AlN thicknesses and orientations, AlN-on-sapphire templates with high crystalline quality and low defect density are suitable for both R&D and device production development.
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THREE CORE MATERIAL FAMILIES
Engineered Materials for Your Device Roadmap
Browse substrates and epi wafers by material family. Standard configurations and custom specifications available for R&D and volume production.
01
ENGINEERED MATERIALS
III-V Compound Semiconductors
02
FOUNDATION MATERIALS
Wide Bandgap Semiconductor
03
PROGRAM-SPECIFIC
Silicon Materials
APPLICATIONS & INDUSTRIES
Applications & Industries
CASE 01 / HIGH-VOLTAGE SYSTEMS
Power Electronics
Wide-bandgap wafer solutions engineered for 800V+ architectures. Ensuring high-efficiency power conversion, fast switching, and reliable high-temperature operation.
APPLICATION FOCUS
EV powertrains · fast charging · industrial motor drives
RECOMMENDED PRODUCTS
4H-SiC
GaN
ENGAGEMENT PROCESS
How a custom inquiry moves forward
Submit your program-specific requirements and our engineers will take them from evaluation to a confirmed quote.
CUSTOM ENGINEERING
Parameters beyond the standard list
Custom diameter & thickness
Orientation & off-cut
Doping & resistivity
Thin films & layer stacks
Surface & edge profile
Marking & packaging
01Submit requirements
02Engineering review
03Specification alignment
04Quote & lead time
TECHNICAL INQUIRY
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Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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