Deep-UV LEDs
AlN-on-sapphire templates are widely used as a starting platform for AlGaN-based UVC LEDs, particularly for UV emission in the approximately 200–280nm range.
Select a diameter to review the corresponding published specification set.
AlN-on-sapphire templates are widely used as a starting platform for AlGaN-based UVC LEDs, particularly for UV emission in the approximately 200–280nm range.
Suitable as an epitaxial template for the development of AlGaN-based UV laser diode structures and other short-wavelength optoelectronic devices.
Used as a template for subsequent growth of AlGaN, AlN and related wide-bandgap epitaxial structures for research and device development.
AlN-on-sapphire can also be used as an engineered nucleation or buffer platform for selected GaN-based electronic and RF structures, depending on the target epitaxial design.
Quick answers on material selection, customization, testing and ordering.
Typical AlN film thickness ranges from 0.5μm to 5μm. The thickness can be customized according to the target epitaxial structure.
Yes. The templates are supplied with an epi-ready, smooth surface suitable for subsequent AlGaN, AlN and related epitaxial layers.
Yes. Our AlN-on-sapphire templates can be used as a starting platform for AlGaN-based UVC LED and other DUV device structures.
Yes. Small quantities and customized specifications can be discussed for research and prototype development.
Technical Inquiry
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