AlN on Sapphire Template — C-Plane, 2–6 inch, Epi-Ready | PWG

AlN Template

AlN on Sapphire Template

Sapphire based AlN templates are available in multiple wafer sizes and customizable AlN thicknesses and orientations, AlN-on-sapphire templates with high crystalline quality and low defect density are suitable for both R&D and device production development.
  • Substrate C-plane Sapphire (other orientations available)
  • Size 2", 4”, 6", customizable
  • Epi Thickness 0.5~5μm
  • Surface finished epi-ready
  • XRD FWHM (0002) typical <500 arcsec
  • Custom specification acceptable
  • Package Single wafer cassette, vacuum sealed
Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

ParameterAlN on Sapphire Template
Substrate MaterialSapphire (Al₂O₃)
Substrate OrientationC-plane standard; other orientations available
Size2", 4", 6" and customized
AlN Film Thickness0.5–5μm (optimizable per application)
Surface roughness (AFM)Ra <2nm (10×10 µm²)
XRD FWHM (0002)Typically <500 arcsec*
Applications

Where this wafer delivers value

01

Deep-UV LEDs

AlN-on-sapphire templates are widely used as a starting platform for AlGaN-based UVC LEDs, particularly for UV emission in the approximately 200–280nm range.

02

UV Laser Diodes

Suitable as an epitaxial template for the development of AlGaN-based UV laser diode structures and other short-wavelength optoelectronic devices.

03

AlGaN / AlN Epitaxy

Used as a template for subsequent growth of AlGaN, AlN and related wide-bandgap epitaxial structures for research and device development.

04

GaN-Based Devices

AlN-on-sapphire can also be used as an engineered nucleation or buffer platform for selected GaN-based electronic and RF structures, depending on the target epitaxial design.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Typical AlN film thickness ranges from 0.5μm to 5μm. The thickness can be customized according to the target epitaxial structure.

Yes. The templates are supplied with an epi-ready, smooth surface suitable for subsequent AlGaN, AlN and related epitaxial layers.

Yes. Our AlN-on-sapphire templates can be used as a starting platform for AlGaN-based UVC LED and other DUV device structures.

Yes. Small quantities and customized specifications can be discussed for research and prototype development.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.

Engineering-led response

Inquiries are routed to the appropriate technical or commercial team.

Address

No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China

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Emailvictorchan@powerwafertech.com Phone+86-592-5633652