SiC Wafers

SiC Substrate

SiC substrate wafers for power, RF, optoelectronic and advanced semiconductor applications. Available in 4H-SiC, 6H-SiC and 3C-SiC, with N-type, P-type and semi-insulating options, multiple wafer sizes, doping levels and surface finishes.

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SiC Wafers

SiC Epitaxy

Our SiC epitaxial wafers – grown by CVD on SiC substrates – provide well-controlled uniformity and low defect density, forming a reliable platform for SBD, MOSFET, JFET, IGBT, GTO, BJT and so on from 600V to 10kV.

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GaN Wafers

GaN Template

PWG's GaN templates consist of a high‑crystalline‑quality GaN epitaxial layer grown on foreign substrates, offering an optimal balance of performance, thermal management, and cost efficiency.

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GaN Wafers

GaN LED Epitaxy

PWG's GaN LED epitaxial wafers are ready-to-fabricate heterostructures grown by MOCVD, engineered for high internal quantum efficiency (IQE), uniform emission, and robust performance.

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GaN Wafers

GaN HEMT Epitaxy

GaN HEMT epitaxial wafers are precision-grown AlGaN/GaN heterostructures designed for high-frequency and high-power switching devices.

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GaN Wafers

Freestanding GaN Substrate

Freestanding (FS) GaN substrates are bulk GaN wafers that eliminate the foreign growth template (e.g., sapphire or silicon), providing a native platform with significantly reduced dislocation density. This enables improved device performance, reliability, and lifetime in demanding applications

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