Freestanding (FS) GaN substrates are native bulk GaN wafers eliminating foreign substrates (sapphire/silicon). Featuring ultra-low dislocation density and high crystalline quality, providing the ultimate platform for high-performance laser diodes, Micro-LEDs, and RF devices.

PWG's GaN template refers to high-quality GaN epitaxial layers grown on sapphire, silicon, or SiC substrates. Providing a cost-effective, epi-ready platform for subsequent GaN regrowth and advanced device fabrication.

PWG's GaN LED epitaxial wafers are MOCVD-grown AlGaN/InGaN heterostructures designed for high-efficiency UV, blue, and green LEDs. Featuring precise multi-quantum well (MQW) structures, these epi wafers deliver high internal quantum efficiency (IQE), uniform emission, and superior device reliability.

Precision-grown AlGaN/GaN HEMT structures for high-frequency RF and high-power switching. Featuring low-defect buffers and high-density 2DEG channels for superior device performance.

Premium SiC substrate wafers for power, RF, and optoelectronic devices. Available in 4H, 6H, and 3C polytypes with N-type, P-type, and semi-insulating options. Offered in 2"–12" sizes with Epi-ready finishes for advanced semiconductor fabrication.

SiC epitaxial wafers grown by CVD, delivering excellent thickness uniformity and low defect density. Designed for 600V to 10kV power devices (SBDs, MOSFETs, IGBTs), enabling high-performance applications in EVs, industrial drives, and renewable energy.