SiC Wafers

SiC Substrate

Premium SiC substrate wafers for power, RF, and optoelectronic devices. Available in 4H, 6H, and 3C polytypes with N-type, P-type, and semi-insulating options. Offered in 2"–12" sizes with Epi-ready finishes for advanced semiconductor fabrication.

Polytypes — 4H-SiC · 6H-SiC · 3C-SiC
Conductivity — N-type · P-type · Semi-insulating
Doping Options — N-doped · Al-doped · V-doped
Sizes — 2″ · 3″ · 4″ · 6″· 8″· 12″
Surface — SSP · DSP ·Epi-ready
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter	8”/200mm 4H-SiC Substrate
Polytype	4H
Diameter	200±0.2mm
Thickness	350±25µm, 500±25µm
Orientation	4° toward (11-20) ±0.5°
Conduction Type	N type
Dopant	Nitrogen (N)
Resistivity	0.015~0.03Ω·cm
MPD	≤2ea/cm² (A grade); ≤10ea/cm² (B grade); ≤50ea/cm² (C grade)
TTV	≤10µm(A grade); ≤15µm (B grade); ≤20µm (C grade)
Bow	-25~25µm(A grade); -45~45µm(B grade); -65~65µm(C grade)
Warp	≤35µm(A grade); ≤50µm (B grade); ≤70µm (C grade)
Surface Roughness	Si-face CMP Ra ≤0.2nm; C-face optical polish <5nm
Surface Finish	SSP / DSP, epi-ready
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	6”/150mm 4H-SiC Substrate
Polytype	4H	4H	4H
Diameter	150 ± 0.5mm	145.5 ~ 150 mm	145.5 ~ 150 mm
Thickness	350±25µm, 500±25µm	350 ± 25µm	350 ± 25µm
Orientation	4° toward (11-20) ±0.5°	4° toward (11-20) ±0.5°	2~4° toward (11-20) ±0.5°
Conduction Type	N type	Semi-insulating	P type
Dopant	Nitrogen (N)	Vanadium (V)	Aluminum (Al)
Resistivity	0.015 – 0.028Ω·cm	≥1×10⁸Ω·cm	≤0.3Ω·cm
MPD	≤0.5cm⁻²	≤1cm⁻²	<0.1cm⁻²
TTV	<15µm	≤5µm	≤5µm
Bow	<40µm	–25~25µm	≤15µm
Warp	<60µm	≤35µm	≤30µm
Surface Roughness	Si-face CMP Ra ≤0.2nm; C-face optical polish <1nm
Surface Finish	SSP / DSP, epi ready
Packaging	Single or multi-wafer cassette, vacuum sealed

Parameter	4″/100mm SiC Substrate
Polytype	4H	4H	4H	3C (Cubic)
Thickness	330 – 650µm	350 – 500µm	250 – 430µm	350±25µm
Orientation	4° toward (11-20) ±0.5°	4° toward (11-20) ±0.5°	2~4° toward (11-20) ±0.5°	On-axis (111) ±0.5°
Conduction Type	N type	Semi-insulating	P type	N type
Dopant	Nitrogen (N)	Vanadium (V)	Aluminum (Al)	Nitrogen (N)
Resistivity	0.015–0.028Ω·cm	> 1×10⁸Ω·cm	≤0.3Ω·cm	≤ 1mΩ·cm
MPD (A Grade)	≤ 0.5cm⁻²	≤ 1cm⁻²	≤ 0.1cm⁻²	≤ 0.1cm⁻²
TTV	< 10µm	< 10µm	≤5µm	≤5µm
Bow	< 25µm	< 25µm	≤15µm	≤15µm
Warp	< 45µm	< 45µm	≤30µm	≤30µm
Surface Roughness	Si-face CMP Ra ≤0.2nm; C-face optical polish <1nm
Surface Finish	SSP / DSP, epi ready
Packaging	Single or multi-wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Power Electronics

SiC substrates deliver high breakdown voltage and low switching losses, enabling high-efficiency power devices. Typical devices: SiC MOSFETs, Schottky Barrier Diodes (SBDs), and IGBTs. Applications: EV powertrains, fast charging, smart grids, industrial motor drives.

RF & Microwave Devices

Semi-insulating 4H-SiC is the preferred platform for GaN-on-SiC HEMTs. Its excellent thermal conductivity ensures high-frequency performance. Applications: 5G/6G base stations, radar systems, satellite communications.

Emerging AR/MR Applications

High refractive index and excellent optical properties. Ideal for photonic integrated circuits (PICs) and optical waveguides, enabling compact, high-efficiency AR/MR displays.

Extreme-Environment Electronics

High-temperature resistance and radiation hardness (rad-hard). Engineered for harsh environments: aerospace systems, deep-well drilling sensors, nuclear instrumentation, and critical defense electronics.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What types of SiC substrate wafers does PWG offer?

PWG provides high-quality SiC substrates in 4H, 6H, and 3C polytypes. We offer N-type (N-doped), P-type (Al-doped), and semi-insulating (V-doped) wafers with epi-ready surface finishes to meet your specific device requirements.

What is the difference between N-type, P-type, and semi-insulating SiC wafers?

N-type SiC: Typically nitrogen-doped, widely used for SiC power devices and epitaxial growth. P-type SiC: Typically aluminum-doped, suitable for PN junctions, bipolar devices, and specialized device structures. Semi-insulating SiC: Typically vanadium-doped, designed for high-frequency applications, particularly as a substrate for GaN HEMT epitaxy.

What MPD level can your SiC substrates achieve?

Our SiC substrates are available with different micropipe density (MPD) grades depending on wafer size. For selected 4H-SiC substrates, MPD can be as low as ≤0.1 cm⁻², while 6" and 8" products are available with specifications tailored to your grade and application.

Do you provide SiC wafer processing services?

Yes. Beyond bare substrates, we support value-added processing including dicing, grinding, thinning, CMP polishing, backside metallization, crystal bonding, and ion implantation according to project requirements.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.