SiC Wafers

SiC Epitaxy

Our SiC epitaxial wafers – grown by CVD on SiC substrates – provide well-controlled uniformity and low defect density, forming a reliable platform for SBD, MOSFET, JFET, IGBT, GTO, BJT and so on from 600V to 10kV.

Polytypes — 4H-SiC (homoepitaxy) / 3C-SiC (homo- & heteroepitaxy)
Conductivity — N-type, P-type, Semi-insulating
Diameters — 2″, 4″, 6″, 8″
Thickness range — 0.5 – 200µm (customizable)
Structure — Custom multilayer structures, buffer layers, and precise doping profiles
Thick epitaxial layer — provides 30~200µm thick epitaxial growth service for ultra-high voltage devices, ensuring good uniformity and crystal quality.

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Item	4H-SiC Epi Wafer
Diameter	2”, 4”, 6”, 8”
Substrate	Substrate
Orientation	On-axis, off-axis
Conductivity	N-type
Resistivity	0.015- 0.028Ω·cm
Surface Roughness	≤0.2nm
MPD	≤1cm⁻²
Epi	Epi
Conductivity	N-type
Thickness Range	0.5~200um (Customizable)
Thickness Uniformity	≤10%
Carrier Concentration	1E14~1E19cm-3
Carrier Uniformity	≤20%

Item	P-Type 4H-SiC Based Epitaxial Wafer
Diameter	4”
Substrate	Substrate
Orientation	Off-axis
Conductivity	P-type
Resistivity	≤0.3Ω·cm
Surface Roughness	≤0.5nm
MPD	≤0.1cm⁻²
Epi	Epi
Conductivity	N-type
Thickness Range	5~100um (Customizable)
Thickness Uniformity	≤4%
Carrier Concentration	1E15~5E16cm-3
Carrier Uniformity	≤ 10%

Item	3C-SiC Homoepitaxy
Diameter	2”
Substrate	Substrate
Orientation	On-axis
Conductivity	N-type
Resistivity	≤1mΩ·cm
Surface Roughness	≤0.5nm
MPD	≤0.1cm⁻²
Epi	Epi
Conductivity	N-type
Thickness Range	5~100um (Customizable)
Thickness Uniformity	≤4%
Carrier Concentration	1E15~5E16cm-3
Carrier Uniformity	≤ 10%

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What carrier concentration can be achieved?

For standard 4H-SiC homoepitaxy, carrier concentration can be controlled over approximately 1×10¹⁴–1×10¹⁹ cm⁻³, depending on the conductivity type and epi design.

What is the typical thickness uniformity of SiC epitaxial layers?

For standard 4H-SiC homoepitaxy, thickness uniformity can be controlled to approximately ≤10%. For selected P-type SiC epi structures, uniformity can reach ≤4%. Actual performance depends on wafer size, epi thickness, and structure.

Can you provide multilayer or complex SiC epi structures?

Yes. PWG can develop custom multilayer epitaxial structures, including buffer layers, current-spreading layers, channel layers, barrier layers, and other device-specific structures.

Can you provide thick SiC epitaxy for high-voltage devices?

Yes. 30–200 μm thick SiC epitaxial layers can be developed for ultra-high-voltage applications. Thickness, doping concentration, and uniformity can be optimized according to the target breakdown voltage.

Technical Inquiry

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