GaN Wafers
GaN LED Epitaxy
PWG's GaN LED epitaxial wafers are ready-to-fabricate heterostructures grown by MOCVD, engineered for high internal quantum efficiency (IQE), uniform emission, and robust performance.
- Substrate options — sapphire (flat or patterned), Si
- Wavelength range — ultraviolet (265–405nm), blue (445–475nm), and green (510–530nm)
- Active region — InGaN/GaN MQW for visible emission; AlGaN-based structures for UV
- Customization — Layer thicknesses, doping concentrations, and epi-structure
Detailed Specifications
Published specifications by wafer diameter.
Select a diameter to review the corresponding published specification set.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
For visible LEDs, the active region typically uses InGaN/GaN MQWs. For UV LEDs, AlGaN-based active structures are used to achieve shorter emission wavelengths.
Yes. PWG can customize layer thickness, doping concentration, MQW design, composition, emission wavelength, and overall epi structure according to the customer's device and process requirements.
Yes. Customized GaN LED epitaxial structures can be developed for R&D, prototype fabrication, and production applications, with specifications adjusted to the customer's device requirements.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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