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UV Curing & Purification
AlGaN-based UVA/UVC epi wafers for curing inks, resins, and coatings. High-power UVC epi wafers for efficient water and air purification systems.
GaN Wafers
GaN LED Epitaxy
PWG's GaN LED epitaxial wafers are MOCVD-grown AlGaN/InGaN heterostructures designed for high-efficiency UV, blue, and green LEDs. Featuring precise multi-quantum well (MQW) structures, these epi wafers deliver high internal quantum efficiency (IQE), uniform emission, and superior device reliability.
- Substrate options — sapphire (flat or patterned), Si
- Wavelength range — UVC (265–280nm), UVA (365–405nm), Blue (445–475nm), Green (510–530nm)
- Active region — InGaN/GaN MQW (Visible) · AlGaN-based (UV)
- Customization — Layer thicknesses, doping concentrations, and epi-structure
- Packaging — Single wafer cassette, vacuum sealed
Detailed Specifications
Specifications by wafer type.
Select a wafer type to view detailed specs
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Applications
Where this wafer delivers value
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Medical & Sensing
Reliable UVC emission for medical sterilization and disinfection equipment. Customized UV and visible epi wafers for advanced bio-sensing and environmental sensing.
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General & Automotive Lighting
High-efficiency blue and green emitters for general and architectural lighting. Robust epitaxial structures for automotive headlights, DRLs, and interior lighting.
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Display & Micro-LED
Uniform, high-brightness epi wafers for LCD backlight units (BLU). Advanced InGaN/GaN MQW structures enabling next-generation micro-LED displays.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
PWG provides MOCVD-grown GaN LED epitaxial wafers on Flat Sapphire, Patterned Sapphire Substrate (PSS), and Silicon (Si). PSS is recommended for high-brightness blue and green LEDs to enhance light extraction efficiency, while Si offers a cost-effective, scalable platform for specific power and sensor applications.
Our standard portfolio covers a wide spectrum: UVC (265–280nm), UVA (365–405nm), Blue (445–475nm), Green (510–530nm), and Red (590–600nm). We also offer customized wavelength targeting upon request.
Yes. PWG offers full customization of layer thickness, doping concentration, InGaN/GaN multiple quantum well (MQW) design, and AlGaN-based active structures for UV LEDs. Our engineering team tailors the epitaxial structure to match your exact device and process requirements.
Every batch undergoes rigorous quality control, including XRD, AFM, and PL mapping, to ensure strict control of emission wavelength uniformity, thickness, and low defect density. We guarantee batch-to-batch consistency with full traceability and provide a Certificate of Analysis (CoA).
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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