GaN Wafers

Freestanding GaN Substrate

Freestanding (FS) GaN substrates are bulk GaN wafers that eliminate the foreign growth template (e.g., sapphire or silicon), providing a native platform with significantly reduced dislocation density. This enables improved device performance, reliability, and lifetime in demanding applications

Size — 4-inch, 2-inch, 10*10mm2
Crystal orientation — a/c/m-plane, semi-polar, non-polar
Dislocation density — <5x106cm⁻² typical
Conduction — semi-insulating or conductive

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	4”/100mm Freestanding GaN Substrate
Crystal Orientation	c-plane (0001) / a-plane (11-20) / m-plane (10-10) / Semi-polar / Non-polar (custom)
Thickness	300 – 500 µm (standard); customizable
Dislocation Density	Typically <5×10⁶cm⁻²
Conduction Type / Doping	n-type (Si-doped) · Semi-insulating (Fe- or C-doped)
Surface Finish	Epi-ready polished, Ra ≤ 0.3nm
FWHM	≤ 100arc.sec
TTV	≤ 15µm
Bow	≤ 20µm
Usable Area	≥ 90%

Parameter	2”/50.8mm Freestanding GaN Substrate
Crystal Orientation	c-plane (0001) / a-plane (11-20) / m-plane (10-10) / Semi-polar / Non-polar (custom)
Thickness	300 – 500 µm (standard); customizable
Dislocation Density	Typically < 5 × 10⁶cm⁻²
Conduction Type / Doping	n-type (Si-doped) · Semi-insulating (Fe- or C-doped)
Surface Finish	Epi-ready polished, Ra ≤ 0.3 nm
FWHM	≤ 100 arc.sec
TTV	≤ 15 µm
Bow	≤ 20 µm
Usable Area	≥ 90%

Parameter	10 × 10 mm² Freestanding GaN Substrate
Crystal Orientation	c-plane (0001) / a-plane (11-20) / m-plane (10-10) / Semi-polar / Non-polar (custom)
Thickness	300 – 500µm (standard); customizable
Dislocation Density	Typically <5×10⁶cm⁻²
Conduction Type / Doping	n-type (Si-doped) · Semi-insulating (Fe- or C-doped)
Surface Finish	Epi-ready polished, Ra ≤ 0.3nm
FWHM	≤ 100arc.sec
TTV	Not specified (proportional to size)
Bow	Not specified (proportional to size)
Usable Area	≥ 90%

Applications

Where this wafer delivers value

Blue, Green & UV Laser Diodes (LDs)

The low defect density is critical for achieving long operational lifetime, low threshold current, and high reliability in edge-emitting lasers and VCSELs.

Micro-LEDs & Advanced Displays

Essential for manufacturing high-efficiency, uniform micro-pixel arrays with minimal wavelength variation, driving next-generation displays for AR/VR and ultra-high-brightness applications.

High-Power / High-Frequency RF Devices

The combination of excellent thermal conductivity and semi-insulating properties makes these substrates ideal for high-linearity, high-efficiency RF power amplifiers in 5G/6G infrastructure and millimeter-wave systems.

Fundamental & Applied R&D

The definitive platform for exploring novel GaN device physics, quantum structures, and next-generation optoelectronic concepts.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What is the typical dislocation density?

The typical dislocation density is <5 × 10⁶ cm⁻². Specific values can be discussed according to the required wafer grade and application.

Can you provide non-polar or semi-polar GaN substrates?

Yes. In addition to conventional c-plane GaN, we can provide a-plane, m-plane, semi-polar and non-polar substrates according to the requirements of the intended device structure.

Technical Inquiry

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