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RF power amplifiers
GaN-on-SiC / GaN-on-Si HEMT epiwafers for 5G/6G massive MIMO, satellite communication (SATCOM), and phased-array radar systems.
GaN Wafers
GaN HEMT Epitaxy
Precision-grown AlGaN/GaN HEMT structures for high-frequency RF and high-power switching. Featuring low-defect buffers and high-density 2DEG channels for superior device performance.
- Size — 2"–8"
- Substrate platform — Sapphire, Si or SiC
- Epitaxial Structure — AlGaN/GaN HEMT (Custom Al composition & GaN thickness)
- 2DEG Characteristics — High density (>1.0 × 10¹³ cm⁻²)
- Packaging — Single wafer cassette, vacuum sealed
Detailed Specifications
Specifications by wafer type.
Select a wafer type to view detailed specs
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
* Customized epi structures are available according to device requirements.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Applications
Where this wafer delivers value
02
Fast-Charging & Consumer
GaN on Si HEMT epi wafers for ultra-fast chargers (USB-PD), wireless charging, and compact power supplies in smartphones, laptops, and IoT devices.
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Power Conversion & Data Centers
GaN HEMT epi on sapphire/silicon for AI server PSUs, industrial motor drives, and renewable energy inverters (solar/wind). Enabling higher power density and efficiency.
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Electric vehicles
Si-based GaN HEMT epitaxial wafers for 800V onboard chargers (OBC), DC-DC converters, and traction inverters, enabling smaller, lighter, and more efficient EV power systems.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
GaN-on-SiC: Best for high-power RF (5G/6G, radar) due to excellent thermal conductivity. GaN-on-Si: Cost-effective for power electronics (fast charging, EV OBC) and scalable to 8-inch. GaN-on-Sapphire: Economical platform for RF and optoelectronics where thermal demands are lower.
Yes. We offer full customization of Al composition and thickness to tune 2DEG density, mobility, and threshold voltage. AlN/(In)AlN barrier structures and custom buffer layers are also available.
GaN HEMT epitaxy wafers are available from 2" to 8" (custom sizes available). Standard specs include Epi-ready surfaces, low defect density, and strict TTV/Bow/Warp control.
Yes. We are R&D friendly with low MOQ. We support rapid prototyping (fast turnaround), pilot runs, and seamless transition to high-volume production.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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