GaN Wafers

GaN Template

PWG's GaN templates consist of a high‑crystalline‑quality GaN epitaxial layer grown on foreign substrates, offering an optimal balance of performance, thermal management, and cost efficiency.

Substrate options — sapphire, silicon, or SiC
GaN epilayer conduction — N‑type (Si‑doped), P‑type (Mg‑doped), and semi‑insulating (Fe‑doped)
Epi Thickness — 1µm to 100µm (customizable)
Crystalline quality — Dislocation density <1×10⁸cm⁻² (on sapphire)
Extended material options — AlGaN template, InGaN template

Share this product:

Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Item	GaN-on-Sapphire (GaN-on-Al₂O₃) Template
Substrate	Sapphire
Diameters	2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch (150mm)
Surface Finished	Epi-ready, single or double-side polished
Surface Roughness	Ra<0.5nm
GaN Epilayer	GaN Epilayer
Conduction Types	N-type (Si-doped), P-type (Mg-doped), and Semi-insulating (Fe-doped)
Thickness Range	4µm to 100µm, customizable
Dislocation Density	typically < 1×10⁸ cm⁻²
Resisitivity	• N-type: < 0.05Ω·cm • P-type: < 1Ω·cm • Semi-insulating: > 1×10⁶Ω·cm
XRD FWHM of (002)	<200 arcsec.
XRD FWHM of (102)	<200 arcsec.

Item	GaN on Silicon Template
Substrate	Silicon
Diameters	2-inch (50.8mm), 4-inch (100mm), 6-inch (150mm), and 8-inch (200mm)
Surface Finished	Epi-ready, single or double-side polished
Resistivity	Low resistivity or high Resistivity
GaN Layer	GaN Layer
Conduction Types	N-type (Si doped), P-type (Mg doped) and Semi-insulating (Fe doped)
Thickness	~4-6 µm, customizable

Item	GaN on SiC Template
Substrate	Semi-Insulating 4H-SiC
Diameters	2-inch (50.8mm), 4-inch (100mm), and 6-inch (150mm)
Surface Finished	Epi-ready, single or double-side polished
Surface Roughness	Ra<0.5nm
GaN Epilayer	GaN Epilayer
Conduction Types	N-type (Si-doped), P-type (Mg-doped), and Semi-insulating (Fe-doped)
Thickness Range	1µm~2µm, customizable
XRD FWHM of (002)	<400 arcsec.
XRD FWHM of (102)	<300 arcsec.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Can GaN templates be used for further epitaxial growth?

Yes. GaN templates are primarily designed as epi-ready platforms for subsequent GaN or related III-nitride epitaxy, helping simplify the growth process and provide a controlled crystalline surface.

Do you supply AlGaN and InGaN templates?

Yes. In addition to GaN templates, PWG can provide AlGaN and InGaN templates for applications requiring bandgap engineering, particularly advanced UV, visible-light, and other optoelectronic devices.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.