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Power Electronics
An optimal platform for high-voltage and high-power switching devices, including GaN-on-Si power HEMTs for fast chargers, EV powertrains, and data center power supplies.
GaN Wafers
GaN Template
PWG's GaN template refers to high-quality GaN epitaxial layers grown on sapphire, silicon, or SiC substrates. Providing a cost-effective, epi-ready platform for subsequent GaN regrowth and advanced device fabrication.
- Substrate options — sapphire, silicon, or SiC
- GaN epilayer conduction — N‑type (Si‑doped), P‑type (Mg‑doped), and semi‑insulating (Fe‑doped)
- Epi Thickness — 1µm to 100µm (customizable)
- Crystalline quality — Dislocation density <1×10⁸cm⁻² (on sapphire)
- Extended material options — AlGaN template, InGaN template
- Surface finished — Epi-ready
- Packaging — Single wafer cassette, vacuum sealed
Detailed Specifications
Specifications by wafer type.
Select a wafer type to view detailed specs
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export Control Notice
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Applications
Where this wafer delivers value
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RF & Communications
GaN templates are ideal for high-frequency RF front-end modules, 5G/6G infrastructure, and mmWave power amplifiers requiring high electron mobility and thermal stability.
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Optoelectronics & Micro-LED
Applied in epitaxial growth of blue and green LED emitters, laser diodes (LDs), and next-generation Micro-LED displays. Enabling advanced InGaN/GaN MQW structures for high-efficiency light emission.
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UV & Sensing
For fabricating UVC/UVA photodetectors, solar-blind UV sensors, and chemical/bio-sensing devices requiring high crystalline quality and low defect density.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
Yes. GaN templates are primarily designed as epi-ready platforms for subsequent GaN or related III-nitride epitaxy, helping simplify the growth process and provide a controlled crystalline surface.
Yes. In addition to GaN templates, PWG can provide AlGaN and InGaN templates for applications requiring bandgap engineering, particularly advanced UV, visible-light, and other optoelectronic devices.
A GaN template consists of a thin GaN epitaxial layer grown on a foreign substrate (e.g., sapphire or Si), offering a cost-effective platform for device regrowth. A freestanding GaN substrate is a bulk GaN wafer with the foreign substrate removed, providing the highest crystalline quality and thermal performance for high-end devices.
Yes. PWG is R&D friendly with flexible MOQ for prototyping. We support rapid customization of epi thickness, doping, and substrate types to match your device requirements.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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