Epi-ready GaSb Wafer | Type-II Superlattice | Power Wafertech Group

III-V Compound Wafers

GaSb Wafer

GaSb (Gallium Antimonide) is the preferred substrate for antimonide-based epitaxy. Featuring a lattice constant of 6.096 Å for excellent InAs/AlSb compatibility, it is widely used for Type-II superlattice (T2SL) IR detectors and mid-IR lasers. Available in 2", 3", and 4" sizes with Epi-ready surface finishes.
  • Size — 2", 3" and 4"
  • Orientation — (100), (111)
  • Conduction type — N-type (Te-doped) and P-type (Zn-doped)
  • Surface finish — SSP or DSP, epi-ready
  • Packaging — Single wafer cassette, vacuum sealed
Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter 2”(50.8mm) GaSb Substrate 2”(50.8mm) GaSb Substrate
Conduction type N-Type P-Type
Dopant Te Zn
Orientation (100) / (111) (100) / (111)
Thickness 500±25um 500±25um
TTV <10um <10um
Bow <10um <10um
Warp <12um <12um
Mobility 2,000–3,500 cm²/V·s 200–500 cm²/V·s
Carrier Concentration (1–20) × 10¹⁷ cm⁻³ (5–100) × 10¹⁷ cm⁻³
EPD ≤2,000 cm⁻² ≤2,000 cm⁻²
Surface Finish SSP / DSP, epi-ready
Flat SEMI standard
Packaging Single wafer cassette, vacuum sealed

Export Control Notice

Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.

Applications

Where this wafer delivers value

01

Type-II Superlattice Infrared Detectors

GaSb provides a lattice-matched platform for InAs/GaSb Type-II superlattices (T2SL), enabling bandgap engineering across a broad infrared spectrum. Typical Devices: T2SL detectors, MWIR/LWIR/VLWIR detectors, Infrared focal plane arrays (FPAs). Applications: Thermal imaging, gas detection, spectroscopy, defense & aerospace.

02

Mid-Infrared Lasers & Photonics

Essential substrate for antimonide-based mid-IR lasers and photonic structures. Typical Devices: Mid-IR laser diodes, IR LEDs, antimonide-based photonic devices, quantum well and superlattice structures. Applications: Gas sensing, environmental monitoring, medical diagnostics, molecular spectroscopy.

03

Thermophotovoltaic Applications

GaSb's narrow bandgap makes it ideal for TPV cells converting thermal radiation into electrical energy. Applications: Waste heat recovery, industrial energy harvesting, thermal-to-electric conversion, radioisotope power systems.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

GaSb provides a perfectly lattice-matched platform for InAs/GaSb and related Type-II superlattice structures. This enables strain-free epitaxial growth and precise bandgap engineering for infrared detection across MWIR, LWIR, and VLWIR spectral ranges.

Both N-type and P-type GaSb substrates can be used for T2SL detectors. N-type GaSb is typically selected when an electrically conductive substrate is required for device fabrication. P-type GaSb is often used for specific detector architectures.

Yes. PWG is R&D friendly for prototyping. We support rapid customization of orientations, doping, and sizes to match your device requirements.

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Technical Inquiry

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Address

No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China

Phone

+86-592-5633652

Email

victorchan@powerwafertech.com

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