III-V Compound Wafers

InAs Wafer

With a narrow direct bandgap of approximately 0.354 eV at 300 K and exceptionally high electron mobility, InAs is well suited for infrared detectors, Hall sensors, high-speed transistors and other high-mobility devices.

Size — 2", 3" and 4"
Orientation — (100), (111)
Conduction type — N-type (S / Sn-doped) and P-type (Zn-doped)
Surface finished — SSP / DSP, epi-ready
Packaging — Single or multi‑wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	2”(50.8mm) InAs Substrate
Conduction Type	N-Type
Dopant	S / Sn
Orientation	(100) / (111)
Thickness	500±25um
TTV	<10um
Bow	<10um
Warp	<12um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s
Carrier Concentration	5 × 10¹⁶–1 × 10¹⁸ cm⁻³
EPD	≤50,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready

Parameter	3”(76.2mm) InAs Substrate
Conduction Type	N-Type
Dopant	S / Sn
Orientation	(100) / (111)
Thickness	600±25um
TTV	<12um
Bow	<12um
Warp	<15um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s
Carrier Concentration	5 × 10¹⁶–1 × 10¹⁸ cm⁻³
EPD	≤50,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	4”(100mm) InAs Substrate
Conduction Type	N-Type
Dopant	S / Sn
Orientation	(100) / (111)
Thickness	900±25um
TTV	<15um
Bow	<15um
Warp	<20um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s
Carrier Concentration	5 × 10¹⁶–1 × 10¹⁸ cm⁻³
EPD	≤50,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Infrared Detection

The narrow bandgap of InAs makes it suitable for infrared detection and sensing, particularly in the short- and mid-infrared range. Typical devices: Infrared photodetectors IR sensors Gas sensors Thermal imaging devices Spectroscopy detectors Recommended substrate: N-type or P-type InAs, depending on the device structure.

High-Mobility Electronics

InAs offers exceptionally high electron mobility and low effective electron mass, making it an attractive material for high-speed and high-mobility electronic devices. Typical devices: High-mobility transistors High-frequency devices Low-noise electronic devices Hall sensors Advanced III-V electronic structures Recommended substrate: N-type InAs for applications requiring high electron mobility.

Infrared & Optoelectronic Research

InAs substrates are widely used as a platform for advanced III-V material and device research. Typical applications: Infrared optoelectronics Semiconductor nanostructures Quantum devices Epitaxial material development Advanced photodetectors

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Why is InAs suitable for high-mobility devices?

InAs has exceptionally high electron mobility and a low electron effective mass, making it attractive for high-speed transistors, Hall sensors and other high-mobility electronic devices.

Which InAs wafer is recommended for infrared detectors?

Both N-type and P-type InAs can be used for infrared detector structures. The appropriate conductivity type depends on the device and epitaxial design.

Which InAs wafer is suitable for high-mobility electronic devices?

N-type InAs is commonly selected for applications that require high electron mobility.

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