III-V Compound Wafers

InAs Wafer

Power Wafertech Group supplies indium arsenide (InAs) substrate wafers for infrared detection, high-mobility electronics and advanced III-V semiconductor research. Available options include N-type and P-type InAs, with selected wafer diameters, crystal orientations and surface finishes for device fabrication and epitaxial growth.

Size — 2", 3" and 4"
Orientation — (100), (111)
Conduction type — N-type (S / Sn-doped) and P-type (Zn-doped)
Surface finished — SSP / DSP, epi-ready
Packaging — Single or multi‑wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter	2”(50.8mm) InAs Substrate
Conduction Type	N-Type	P-Type
Dopant	S / Sn	Zn
Orientation	(100) / (111)	(100) / (111)
Thickness	500±25um	500±25um
TTV	<10um	<10um
Bow	<10um	<10um
Warp	<12um	<12um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s	100–400 cm²/V·s
Carrier Concentration	5 × 10¹⁵–1 × 10¹⁰ cm⁻³	(1–10) × 10¹⁵ cm⁻³
EPD	≤50,000 cm⁻²	≤30,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready	SSP / DSP, epi-ready
Flat	SEMI standard	SEMI standard
Packaging	Single wafer cassette, vacuum sealed	Single wafer cassette, vacuum sealed

Parameter	3”(76.2mm) InAs Substrate
Conduction Type	N-Type	P-Type
Dopant	S / Sn	Zn
Orientation	(100) / (111)	(100) / (111)
Thickness	600±25um	600±25um
TTV	<12um	<12um
Bow	<12um	<12um
Warp	<15um	<15um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s	100–400 cm²/V·s
Carrier Concentration	5 × 10¹⁵–1 × 10¹⁰ cm⁻³	(1–10) × 10¹⁵ cm⁻³
EPD	≤50,000 cm⁻²	≤30,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready	SSP / DSP, epi-ready
Flat	SEMI standard	SEMI standard
Packaging	Single wafer cassette, vacuum sealed	Single wafer cassette, vacuum sealed

Parameter	4”(100mm) InAs Substrate
Conduction Type	N-Type	P-Type
Dopant	S / Sn	Zn
Orientation	(100) / (111)	(100) / (111)
Thickness	900±25um	900±25um
TTV	<15um	<15um
Bow	<15um	<15um
Warp	<20um	<20um
Electron Mobility	6,000–20,000 or ≥20,000 cm²/V·s	100–400 cm²/V·s
Carrier Concentration	5 × 10¹⁵–1 × 10¹⁰ cm⁻³	(1–10) × 10¹⁵ cm⁻³
EPD	≤50,000 cm⁻²	≤30,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready	SSP / DSP, epi-ready
Flat	SEMI standard	SEMI standard
Packaging	Single wafer cassette, vacuum sealed	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Infrared Detectors & Sensors

InAs is used in infrared photodetectors and sensing structures, including selected gas-sensing and spectroscopy applications. The required substrate conductivity type, carrier concentration and surface condition depend on the detector design and material structure. Typical applications: Infrared photodetectors, IR sensors, spectroscopy and gas-sensing research.

High-Mobility Electronics

The high electron mobility of InAs makes it a useful material for high-mobility electronic structures and advanced transistor research. Its electrical properties can support the development of high-speed devices and specialized electronic heterostructures. Typical applications: High-mobility transistors, Hall-effect measurements, high-speed electronics and III-V heterostructure research.

III-V Epitaxy

InAs wafer provides a versatile platform for epitaxial growth of compound semiconductor structures via MBE and MOCVD. Their narrow direct bandgap (0.354 eV) and high electron mobility make them ideal for growing infrared-sensitive heterostructures, including InAs/GaSb Type-II superlattices, InAsSb alloys, and quantum-confined structures. Typical applications include epitaxial material development for MWIR/LWIR detectors, high-speed transistors, and advanced III-V semiconductor research.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What are InAs wafers used for?

Indium arsenide (InAs) wafers are used in infrared detection, high-mobility electronic devices and III-V semiconductor research. Typical applications include infrared photodetectors, Hall sensors, high-speed transistor structures and epitaxial material development.

Which InAs wafer is suitable for epitaxial growth?

The appropriate InAs substrate depends on the epitaxial material system, growth process, crystal orientation, surface condition and device structure. Specify your growth requirements and surface acceptance criteria when requesting a quotation.

Which InAs wafer is suitable for high-mobility electronic devices?

N-type InAs is commonly selected for applications that require high electron mobility.

How do I request an InAs wafer quotation?

Submit your required specifications, quantity and intended application through the technical inquiry form. You can also attach a specification sheet or drawing to help us assess your requirements.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

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