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Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment.
Semi-insulating GaAs substrates are widely used in high-frequency device fabrication, including MMICs, pHEMTs, HEMTs and HBTs. They are suitable for RF front ends, microwave amplifiers, wireless communications and related applications.
GaAs substrates are used for the epitaxial growth of III-V optoelectronic structures, including AlGaAs- and InGaAs-based device systems. Applications include VCSELs, laser diodes, infrared emitters and optical sensing devices.
GaAs is an important III-V semiconductor material for high-efficiency photovoltaic devices, including space solar cells and concentrator photovoltaic systems. Substrate requirements depend on the cell architecture and manufacturing process.
GaAs substrates support the growth of III-V epitaxial structures for selected LED and optoelectronic applications, including red and infrared emitters.
Quick answers on material selection, customization, testing and ordering.
Conductive GaAs wafers, including N-type and P-type materials, are used in device structures requiring specific electrical conductivity. Semi-insulating GaAs wafers offer high electrical resistivity and are commonly used in RF and microwave device fabrication. The appropriate type depends on the device architecture and process requirements.
Semi-insulating GaAs is commonly considered for MMICs, pHEMTs and other RF or microwave devices. The required resistivity, crystal orientation, surface finish and other parameters should be specified according to the device design.
GaAs substrates are widely used for the epitaxial growth of VCSEL and laser diode structures. The required conductivity type, orientation, surface finish and other specifications depend on the epitaxial design and device architecture.
Selected wafer diameters include 2", 3", 4" and 6". Crystal orientation, conductivity type, resistivity, surface finish and other parameters are subject to the available material specification. Contact PWG to confirm requirements for your project.
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