Silicon Epitaxial Wafer | Power Wafertech Group

Silicon Epitaxial Wafer

Power Wafertech Group supplies silicon epitaxial wafers (Si epi wafers) grown by advanced CVD epitaxy. Precisely controlled silicon epitaxial layers are deposited on conductive substrates to achieve the required thickness, doping profile and resistivity for semiconductor device fabrication.

Size — 4", 6", 8" and 12"
Method — CVD
Epi structure — N/N⁺, P/P⁺, P/N structures
Epi thickness — 0.5–150 μm
Epi resistivity — 0.1–1000 Ω·cm
Substrate — N⁺, P⁺ and high-resistivity substrates
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	Specification
Wafer Diameter	4", 6", 8", 12"
Growth Method	CVD
Substrate Type	N⁺ (Sb/As), P⁺ (B), High-Resistivity Si
Crystal Orientation	(100), (111)
Epi Doping Type	N-type (P), P-type (B)
Epi Structure	N/N⁺, P/P⁺, P/N, multilayer / customized
Epi Resistivity	0.1–1000 Ω·cm
Epi Thickness	0.5–150 μm
Doping Profile	Customized
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Silicon Epitaxy for Power Devices

1)Power MOSFETs & IGBTs N/N⁺ silicon epi wafers can be designed with controlled epi thickness and resistivity to form the drift region of high-voltage power devices. Typical applications include: Power MOSFETs IGBTs Power modules Industrial motor drives Automotive power electronics The epi layer can be customized according to the target breakdown voltage, on-resistance and device architecture. 2)Schottky & JBS Diodes Controlled lightly doped silicon epi layers on heavily doped substrates can be used to optimize the trade-off between breakdown voltage and forward voltage. Typical applications: Schottky diodes JBS diodes Power rectifiers

Silicon Epi for RF & High-Speed Devices

High-resistivity silicon substrates and controlled epitaxial layers can be used for RF and microwave semiconductor structures, helping reduce unwanted parasitic effects. Typical applications include: RF switches Low-noise amplifiers VCOs High-frequency analog circuits Microwave devices

Silicon Epi for Bipolar Devices

Customized P/N, N/P/N or P/N/P structures can be developed for bipolar device applications. Controlled epi thickness and doping profiles enable optimization of: Collector structures Base-collector isolation Breakdown characteristics High-frequency performance Typical applications include BJTs and high-speed analog devices.

Silicon Epi for CMOS Image Sensors

P-type epitaxial silicon on heavily doped substrates can be used for CMOS image sensor applications. The epitaxial structure can help control substrate-related electrical effects and support: Low dark current Reduced pixel-to-pixel crosstalk Improved image uniformity High-performance low-light imaging

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Can you customize the doping profile?

Yes. Epi thickness, resistivity, doping type, doping concentration and multilayer structures can be customized.

Do you support small-batch R&D orders?

Yes. We support R&D, prototype and small-batch requirements, as well as production-scale orders.

What information is required for a quotation?

Please provide the wafer size, orientation, substrate type, resistivity, epi thickness, epi doping, structure and quantity.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

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