Indium Phosphide (InP) wafer is a high-mobility, direct-bandgap (1.34eV) III-V compound semiconductor. Optimized for high-frequency RF (up to THz), 1.3–1.55µm optical communications, and low-noise Photonic Integrated Circuits (PICs). Featuring low EPD and epi-ready surface finishes.

Gallium Arsenide (GaAs) combines a direct bandgap with high electron mobility, making it a widely used substrate material for high-frequency and optoelectronic devices. PWG's GaAs wafers support MMICs, HEMTs, HBTs, VCSELs, laser diodes, and high-efficiency solar cells, available in multiple diameters, crystal orientations, and Epi-ready surface finishes.

Power Wafertech Group supplies indium arsenide (InAs) substrate wafers for infrared detection, high-mobility electronics and advanced III-V semiconductor research. Available options include N-type and P-type InAs, with selected wafer diameters, crystal orientations and surface finishes for device fabrication and epitaxial growth.

With a lattice constant of approximately 6.096 Å, GaSb (Gallium Antimonide) provides excellent lattice compatibility with antimonide-based materials such as InAs, AlSb and InAsSb, making it an important substrate platform for Type-II superlattice (T2SL) infrared detectors, mid-IR lasers and advanced optoelectronic devices. GaSb wafers are available in multiple diameters, crystal orientations and surface finishes for epitaxial growth and device fabrication.

With an ultra-narrow direct bandgap of approximately 0.17 eV at 300 K and exceptionally high electron mobility, InSb is particularly suited for mid-wavelength infrared (MWIR) detection in the 3–5 μm range. PWG supplies N-type and P-type Indium Antimonide (InSb) wafers for high-sensitivity infrared detection, magnetic sensing and cryogenic electronics.

Freestanding (FS) GaN substrates are native bulk GaN wafers eliminating foreign substrates (sapphire/silicon). Featuring ultra-low dislocation density and high crystalline quality, providing the ultimate platform for high-performance laser diodes, Micro-LEDs, and RF devices.