Spacer-layer thickness strongly affects cryogenic noise in InP HEMTs, with an optimized value balancing mobility, gate control, and real-space transfer. Cap-layer doping and stability must also be co-designed with metallization and lift-off processes to keep contact resistance low.
2026-10-23 17:24:21
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Spacer-layer thickness strongly affects cryogenic noise in InP HEMTs, with an optimized value balancing mobility, gate control, and real-space transfer. Cap-layer doping and stability must also be co-designed with metallization and lift-off processes to keep contact resistance low.
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